Course
code | EC332 |
credit_hours | 3 |
title | Electronic Devices (2) |
arbic title | |
prequisites | EC233, EE232 |
credit hours | 3 |
Description/Outcomes | Operation of BJT - DC Analysis - BJT Base Width Modulation - AC Analysis of BJT - Common Emitter, Collector, and Base Amplifiers - BJT as a Switch - Operation of JFET - DC and AC rnAnalysis - MOS-Structure - Operation of MOSFET - Depletion/Enhancement Mode MOSFETs - DC Analysis of MOSFET - Channel Length Modulation - Body Effect - MOSFET Capacitances - AC Analysis of MOSFET - Common Source, Drain, and Gate Amplifiers - MOSFETs Amplifiers using Active Loads - Schockley, Diac, SCR, Triac, UJT, and PUT Circuits.rn |
arabic Description/Outcomes | |
objectives | Studying theoretically and experimentally both transistor types:rnrnBJT Bipolar junction transistor.rnFET Field effect transistor.rnrnStudying theoretically the 4 layer devices (Thyristors).rn |
arabic objectives | |
ref. books | J.Singh, "Semiconductor Devices", 1994.rnJ.Millman, "Microelectronics", 1983.rnC.J.Savant, M.S.Rooden and G.L.Carpenter,Electronic Design, 1991. |
arabic ref. books | |
textbook | Sedra-Smith, Microelectronic Circuits, Oxford Pub., 5th ed, 2004. |
arabic textbook | |
objective set | |
content set | |
Course Content
content serial |
Description |
1 |
Operation of BJT.
|
2 |
Biasing Methods.
|
3 |
Biasing Methods Cont`d – BJT Base Width Modulation.
|
4 |
AC Equivalent Circuits of BJT .
|
5 |
Common Emitter, Collector, and Base Amplifiers.
|
6 |
BJT as a Switch .
|
7 |
Operation of JFET – DC and AC Analysis.
|
8 |
MOS-Structure, Operation of MOSFET.
|
9 |
Depletion/Enhancement Mode MOSFETs, DC Analysis of MOSFET.
|
10 |
Channel Length Modulation, Body Effect, and MOSFET Capacitances.
|
11 |
AC Equivalent Circuits of MOSFET.
|
12 |
Common Source, Drain, and Gate Amplifiers.
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13 |
MOSFETs Amplifiers using Active Loads.
|
14 |
Schockley, Diac, SCR, Triac Circuits.
|
15 |
UJT and PUT Circuits.
|
16 |
Final Examination
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